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| 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE FEATURES * N-channel enhancement mode field effect transistor,designed for high speed pulse amplifier and drive application,which ismanufactured by the N-channel DMOS process. * High density cell design for low RDS(ON) * Voltage controlled small signal switching. * Rugged and reliabale. * High saturation current capability. * High-speed switching.CMOS logic compatible. * CMOS logic compatible input. * Not thermal runaway. * No secondary breakdown. * Pb free product : 99% Sn above can meet RoHS environment substance directive request .004(.10)MIN. 60 Volts POWER 200 mWatts SOT-323 Unit: inch (mm) .087(2.2) .070(1.8) .054(1.35) .045(1.15) .056(1.40) .047(1.20) .006(.15) .002(.05) .004(.10)MAX. MECHANICAL DATA * Case: SOT-323, Plastic * Terminals: Solderable per MIL-STD-750, Method 2026 * Approx. Weight: 0.0048 gram * Marking: 72W .016(.40) .078(.20) ABSOLUTE RATINGS PA RA M E TE R D r a i n- S o ur c e Vo l t a g e e D r a i n- g a t e Vo l t a g e e G a t e - S o ur c e Vo l t a g e D r a i n C ur r e nt To t a l P o w e r D i s s i p a t i o n O p e r a t i n g a n d S t o r a g e Te m p e r a t u r e R a n g e The r m a l R i s i s t a nc e , J unc t i o n- t o - A m b i e nt S ym b o l V DSS V D RG V GS S ID PD T J , T S TG R J A Va l ue 60 60 20 11 5 200 -5 5 to + 1 5 0 625 .044(1.1) .035(0.9) .087(2.2) .078(2.0) U ni t s V V V mA mW O C O C /W D Note 1: R GS <20K 2: FR-5 board 1.0x0.75x0.062 inch witg minmum recommended pad layout 3 Top View 1 G 2 S STAD-DEC.07.2005 PAGE . 1 2N7002W ELECTRICAL CHARACTERISTICS TA=25OC Unless otherwise noted PAR AME T E R OF F C H AR AC T E R IS T IC S D r a i n- S o ur c e B r e a k d o w n Vo l t a g e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Ga te -B o d y L e a k a g e , F o rwa rd G a t e - B o d y L e a k a g e , R e ve r s e B V DSS ID S S IGSSF IGSSR V G S = 0 V , ID = 1 0 u A V D S = 6 0 V, V GS = 0 V, TJ = 2 5 O C V D S = 6 0 V, V GS = 0 V, TJ = 1 2 5 O C V D S =0 , V GS =2 0 V V D S =0 , V GS =2 0 V 60 ---80 ----1 .0 0 .5 100 -100 V uA mA nA nA S ymbol Te s t C o n d i t i o n MIN . T Y P. MAX . U n its ON C H AR AC T E R IS T IC (n o te 1 ) G a t e Thr e s ho l d Vo l t a g e S t a t i c D r a i n- S o ur c e O n- R e s i s i t a nc e D r a i n- S o ur c e O n- Vo l t a g e O n- S t a t e D r a i n C ur r e nt F o r w a r d Tr a n s c o n d u c t a n c e V GS ( t h ) RD S ( ON) V D S ( ON) ID ( ON) GFS V D S = V G S , ID = 2 5 0 u A V G S = 1 0 V , ID = 5 0 0 m A , T J = 2 5 O C V G S = 1 0 V , ID = 5 0 0 m A V G S = 5 V , ID = 5 0 m A V G S = 1 0 V , V D S > 2 V D S ( ON) V D S > 2 V D S ( ON) , I D = 2 0 0 m A 1 .0 --500 80 2 .1 3 .7 ---2 .5 2 .5 3 .7 5 1 .5 --V V mA mS D YN AM IC C H AR AC T E R IS T IC S In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e Tu r n - O n Ti m e Tu r n - O f f Ti m e GISS GOSS GRSS TON TOFF V D S =2 5 V, V GS =0 V, f=1 .0 MHz ----------50 25 5 20 20 pF pF pF ns ns V D D = 3 0 V , R L = 2 5 , ID = 5 0 0 m A V GS = 1 0 V, RGE N= 2 5 STAD-DEC.07.2005 PAGE . 2 2N7002W ELECTRICAL CHARACTERISTICS CURVE ID, DRAIN CURRENT (AMPS) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 T A = 25 C V GS =10V 9V 8V 7V 6V 5V 4V 3V 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 o ID, DRAIN CURRENT (AMPS) 2.0 1.0 V DS =10V 0.8 0.6 0.4 0.2 0 -55 oC 125 oC 25 C o 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VDS, DRAIN SOURCE VOLTAGE(VOLTS) VGS, GATE SOURCE VOLTAGE(VOLTS) Figure 1. Ohmic Region Fig. 9 Z-Current vs. Z-Voltage r DS(on) ,STATIC DRAIN-SOURCE ON-RESISTANCE(NORMALIZED) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 +100 o V GS(th) ,THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 o V GS =10V I D =200mA V DS =V GS I D =1.0mA +140 +100 +140 T,TEMPERATURE( C) F i g u r e 3 . Te m p e r a t u r e v e r s u s St a t i c Drain-Source On-Resistance T,TEMPERATURE( C) Figure 4. Temperature versus Gate Threshold Voltage STAD-DEC.07.2005 PAGE . 3 2N7002W MOUNTING PAD LAYOUT ORDER INFORMATION * Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2005 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.07.2005 PAGE . 4 |
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